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Abstract We report the perpendicular critical fieldH_c2properties of disordered Re-Al bilayers via magneto-transport measurements. The bilayers consisted of a $d_{\mathrm{Re}}=3$nm bottom layer of Re and an upper Al layer with thickness varying betweend_Al = 0 − 3 nm. We find that in this range of Al thicknesses, the bilayer transition temperatureT_cincreases with increasing Al thickness, although their monolayer counterparts have $T_c^{\mathrm{Re}}>T_c^{\mathrm{Al}}$. Furthermore,H_c2of the bilayers has a local maximum at an Al coverage of 1.5 nm with a critical field that is 50% larger than that of the standalone 3 nm Re film. At higher Al thicknessesH_c2drops rapidly but remains more than an order of magnitude greater that that of comparable thickness standalone Al film. Our data show that a thin, disordered Re under-layer can dramatically increase the magnetic field tolerance of the Al over-layer. This would allow one to retain the desirable chemical and metallurgical properties of Al without sacrificing high field compatibility in quantum circuits, such as topological qubit devices and superinductor circuits.